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| savantic semiconductor product specification silicon npn power transistors BDX77 d escription with to-220c package low saturation voltage complement to type bdx78 wide area of safe operation applications for medium power switching and amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 80 v v ebo emitter -base voltage open collector 5 v i c collector current (dc) 8 a i cm collector current-peak 12 a i b base current 3 a p t total power dissipation t c =25 60 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 2.08 /w
savantic semiconductor product specification 2 silicon npn power transistors BDX77 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =0.2a ;i b =0 80 v v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 100 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 5 v v cesat-1 collector-emitter saturation voltage i c =3a; i b =0.3a 1.0 v v cesat-2 collector-emitter saturation voltage i c =6a; i b =0.6a 1.5 v v besat base-emitter saturation voltage i c =6a; i b =0.6a 2.0 v i ceo collector cut-off current v ce =30v ;i b =0; 0.2 ma i cbo collector cut-off current v cb =40v ;i e =0;t j =150 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 0.5 ma h fe dc current gain i c =1a ; v ce =2v 30 f t transition frequency i c =0.3a ; v ce =3v 7.0 mhz v be base-emitter on voltage i c =3a;v ce =2v 1.5 v switching times t on turn-on time 1.0 s t o ff turn-off time i c =2a i b1 =-i b2 =0.2a; 4.0 s savantic semiconductor product specification 3 silicon npn power transistors BDX77 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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